The continuing trend towards miniaturization of integrated circuits has given rise to increasing efforts to supplement and gradually replace conventional CMOS-technologies by nano-technologies and nano-electronics in near future. The latter include magneto-electronics, and single-electron devices, nano-cluster storage elements, and resonant tunneling elements, among others.

Magnetoelectronics is based on the concept of replacing semiconductor magnetic field sensors (Hall sensors) in multi-layer systems by Giant Magneto Resistance (GMR) sensors, and CMOS memories by persistent magnetic memories (M-RAMS). For this purpose it is necessary to deposit stacks of extremely thin metallic and insulating films of about 1nm thickness with well defined interfaces.

There is a new generation of novel components based on the transfer of individual electrons in nano-scale structures. Work centers on memory elements based on the transfer of individual electrons between metal electrodes and on the memory effect of semiconductor nano-clusters in SiO_² films.

Head of the working group:

Prof. Dr. Christian Radehaus